Confession: I am a bit of an English nazi.[1] Certain things really drive me nuts. Confusing plurals with possessives, "its" with "it's," little misspellings...all of these things make my left eye twitch a little. It's one thing to see it in a hastily written email or IM or blog post. It's painful, but survivable, to see it on a sign advertising for a newspaper. When you're publishing a paper on transistors, though, and you can't spell "transistor," I go a little nuts. That's just a single-letter lapse of thought, though.[2] There are worse things you can do.
Quick! Before they fix it! This paper isn't really bad at all. There's a cute little crystal structure in there. But there is one grievous error. See the table?
"Something times ten to the fourth" cm2/Vs is not something you usually see for the charge carrier mobility in an organic semiconductor. Most people are very, very happy if they see a mobility of, say, 4 cm2/Vs...and that's kinda pushing it, since a lot of compounds don't see past the 0.1-or-so range.
So this looks like a really big deal. EXCEPT for this little sentence:
As expressed in Table 1, the hole mobility of 1 deposited at 22 °C was found to be 1.5 10-2 cm2 V-1 s-1, which was 100 times as high as that of 2 under the same condition.
In other words, don't panic. Someone just left out a minus sign or two in there.[3]
Maybe, just maybe, JACS should look things over a little more carefully before they're published.
Sometime after finals week I'll maybe do a series of posts covering transistors in plain English.
[1] NOT to be confused with an actual nazi. Nor am I English.
[2] A quick search for "transister" anywhere in the article from the ACS site got two hits. Two too many.
[3] Simple mistake. Happens to me whenever I see that curly S of death.[4]
[4] Curly S of death = integral sign